DatasheetsPDF.com

BD134

Inchange Semiconductor
Part Number BD134
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Nov 17, 2016
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Collector-Emitter Sustaining...
Datasheet PDF File BD134 PDF File

BD134
BD134

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.
15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.
5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
5 A 13 W 150 ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)