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2STD1665

Part Number	2STD1665
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 17, 2016
Detailed Description	isc Silicon NPN Power Transistor 2STD1665 DESCRIPTION ·Low collector saturation voltage ·High current gain characteris...
Datasheet	2STD1665 PDF File

Overview

isc Silicon NPN Power Transistor 2STD1665 DESCRIPTION ·Low collector saturation voltage ·High current gain characteristics ·Fast-switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulators ·High efficiency low voltage switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Peak Current PC Collector Power Dissipation 20 A 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ...

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