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2SD476N

Part Number	2SD476N
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 17, 2016
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC=2A ·Collector...
Datasheet	2SD476N PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.
0V(Max)@ IC=2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD476N ...

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