DatasheetsPDF.com

2SD469

Part Number	2SD469
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 17, 2016
Detailed Description	isc Silicon NPN Darlingtion Power Transistor DESCRIPTION · Low Collector-Emitter Breakdown Voltage V(BR)CEO= 110V (Min)...
Datasheet	2SD469 PDF File

Overview

isc Silicon NPN Darlingtion Power Transistor DESCRIPTION · Low Collector-Emitter Breakdown Voltage V(BR)CEO= 110V (Min) ·Collector Power Dissipation ·Pc=100W@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 10 A PC Collector Power Dissipation@TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD4...

Similar Datasheet

2SD400 PNP / NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SD400 NPN Transistor - LGE
2SD400 SILICON NPN TRANSISTOR - LZG
2SD400 NPN Transistor - Yukuto
2SD400 Silicon NPN transistor - Blue Rocket Electronics
2SD401 Silicon Transistor - Wing Shing Computer Components
2SD401 SILICON POWER TRANSISTOR - SavantIC
2SD401A Power Transistor - Mospec Semiconductor
2SD401A Transistor - NEC
2SD401A SILICON POWER TRANSISTOR - SavantIC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)