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2SD2689

Part Number	2SD2689
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 17, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High speed. ·High breakdown voltage(VCBO=1500V). ·High reliability(Adopti...
Datasheet	2SD2689 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High speed.
·High breakdown voltage(VCBO=1500V).
·High reliability(Adoption of HVP process).
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Color TV Horizontal Deflection Output Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Pulse 25 A IB Base Current-Continuous 3.
5 A Total Power Dissipation @TC=25℃ 35 PT W Total Power Dissipation @Ta=25℃ 2.
0 TJ Junction Temper...

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