Silicon NPN Power Transistor - Inchange Semiconductor
Description
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1758
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.
5V(Typ)@ IC= 2A ·Complement to Type 2SB1182 ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor
drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM PC TJ
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation Junction Temperature
40
V
32
V
5
V
2
A
2.
5
A
10
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1758
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50uA; IC= 0
ICBO
Collector Cutoff Current
VCB= 20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.
5A; VCE=3V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.
0MHz
fT
Current-Gain—Bandwidth Product IC= 50mA; VCE= 5V
MIN TYP.
MAX UNIT
0.
5
0.
8
V
32
V
5
V
1.
0
μA
1.
0
μA
82
390
30
pF
100
MHz
hFE Classifications
P
Q
R
82-180 120-270 180-390
isc website：www.
iscsemi.
com
2 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
Outline Drawing
INCHANGE Semiconductor
2SD1758
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not desi...
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