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2SD1509

Part Number	2SD1509
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 17, 2016
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD1509 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Coll...
Datasheet	2SD1509 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD1509 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.
5V(Max)@ IC=1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current Co...

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