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MJE3055T

Part Number	MJE3055T
Manufacturer	ON Semiconductor
Description	Complementary Silicon Plastic Power Transistors
Published	Nov 15, 2016
Detailed Description	MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in ge...
Datasheet	MJE3055T PDF File

Overview

MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications.
Features • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO VCB VEB IC IB PD (Note 1) 60 70 5.
0 10 6.
0 75 0.
6 Vdc Vdc Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may...

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