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BUR52

Part Number	BUR52
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 15, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUR52 DESCRIPTION · Collector-Emitte...
Datasheet	BUR52 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUR52 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·High Current Capability ·Low Saturation Voltage : VCE(sat)= 1.
0V(Max)@ IC= 25A APPLICATIONS ·Designed for switching and linear applications in military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO(SUS) Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=100℃ TJ Junction Temperature Tstg Storage Tempe...

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