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BUL128DB

Part Number	BUL128DB
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 15, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL128DB DESCRIPTION ·Collector–Emit...
Datasheet	BUL128DB PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL128DB DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.
) ·Low Collector Saturation Voltage : VCE(sat) = 0.
7V(Max) @ IC= 0.
5A ·Very High Switching Speed APPLICATIONS ·Designed for electronic ballasts for fluorescent lighting.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 4A ICM Collector Current-peak tp<5ms 8A IB Base Current-Continuous 2A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Jun...

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