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BUJ303A

Part Number	BUJ303A
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 15, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for rob...
Datasheet	BUJ303A PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperatu...

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