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BDY82

Part Number	BDY82
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 15, 2016
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector Power Dissipation- : PC= ...
Datasheet	BDY82 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector Power Dissipation- : PC= 36W @TC= 25℃ ·Complement to Type BDY80 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -4 A IB Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 36 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃...

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