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BD678AG

Part Number	BD678AG
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 15, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification BD678AG DESCRIPTION ·Coll...
Datasheet	BD678AG PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification BD678AG DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A ·Complement to Type BD677A ·G=Pb-Free Package APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range ...

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