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MJ21195

Part Number	MJ21195
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 14, 2016
Detailed Description	INCHANGE Semiconductor Silicon PNP Power Transistor DESCRIPTION ·Excellent Gain linearity ·High DC Current Gain- : hFE=...
Datasheet	MJ21195 PDF File

Overview

INCHANGE Semiconductor Silicon PNP Power Transistor DESCRIPTION ·Excellent Gain linearity ·High DC Current Gain- : hFE= 25(min) @IC = -8A ·Total Harmonic Distortion characterized.
·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complement to the NPN MJ21196 APPLICATIONS ·Designed for high power audio output, disk head positioners and other linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -16 A IB Base Current -5 A PD Total Power Dissipation@TC=...

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