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KTD2060

Part Number	KTD2060
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Nov 14, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Powe...
Datasheet	KTD2060 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.
5V(Max)@ (IC= 3A, IB= 0.
3A) ·Complement to Type KTB1368 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction...

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