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KTA1659A

Inchange Semiconductor
Part Number KTA1659A
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistors
Published Nov 14, 2016
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= -180V(Min) ·Complement to ...
Datasheet PDF File KTA1659A PDF File

KTA1659A
KTA1659A


Overview
isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= -180V(Min) ·Complement to Type KTC4370A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5.
0 V IC(DC) Collector Current(DC) -1.
5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature -0.
15 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ KTA1659A isc website: www.
iscsemi.
com 1 isc & iscsemi...



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