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MJW21194

Part Number	MJW21194
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 11, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION •Total Harmonic Distortion Characterized • High DC Current Gain – hFE = 20...
Datasheet	MJW21194 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION •Total Harmonic Distortion Characterized • High DC Current Gain – hFE = 20 Min @ I C = 8 Adc ·Complement to Type MJW21193 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A ICM Collector Current-Pulse 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperatur...

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