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MJD50

Part Number	MJD50
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 11, 2016
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Vo...
Datasheet	MJD50 PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.
3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.
0 A ICM Collector Current-Peak 2.
0 A IB Base Current Collector Power Dissipa...

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