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MJD42C

Part Number	MJD42C
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 11, 2016
Detailed Description	isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining ...
Datasheet	MJD42C PDF File

Overview

...Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type MJD41C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A IB Base Current Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature -2 A 20 W 1.
75 150 ℃ Tstg Storag...

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