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MJ3055

Part Number	MJ3055
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 11, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collecto...
Datasheet	MJ3055 PDF File

Overview

...r-Emitter Saturation Voltage- : VCE(sat)= 1.
1 V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 117 W TJ, Tstg Operating and Storage Junction Temperature Range -55~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
52 ℃/W MJ...

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