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2SC3518-Z

Inchange Semiconductor
Part Number 2SC3518-Z
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 9, 2016
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·100% avalanche te...
Datasheet PDF File 2SC3518-Z PDF File

2SC3518-Z
2SC3518-Z

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak NOTE1 PC Collector Power Dissipation @Ta=25℃ NOTE2 TJ Junction Temperature 7 A 2 W 150 ℃ Tstg Storage Temper...


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