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MJD112

Part Number	MJD112
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 8, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 DESCRIPTION ·High DC current gain ·Lead for...
Datasheet	MJD112 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICP IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Diss...

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