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IRFP150N

Part Number	IRFP150N
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Nov 7, 2016
Detailed Description	isc N-Channel MOSFET Transistor IRFP150N，IIRFP150N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤36mΩ ·Enhance...
Datasheet	IRFP150N PDF File

Overview

isc N-Channel MOSFET Transistor IRFP150N，IIRFP150N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤36mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Fully Avalanche Rated ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 42 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 160 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case the...

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