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MJD253

Part Number	MJD253
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 6, 2016
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturat...
Datasheet	MJD253 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 40(Min) @ IC= -0.
2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.
3V(Max.
)@ IC= -0.
5 A ·Complement to the NPN MJD243 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage, low -power ,high-gain audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collec...

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