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MBR60H100CT

Inchange Semiconductor
Part Number MBR60H100CT
Manufacturer Inchange Semiconductor
Description Schottky Barrier Rectifier
Published Nov 6, 2016
Detailed Description Schottky Barrier Rectifier INCHANGE Semiconductor MBR60H100CT FEATURES ·Low Forward Voltage ·Guard -Ring for Stress Pr...
Datasheet PDF File MBR60H100CT PDF File

MBR60H100CT
MBR60H100CT

Overview
Schottky Barrier Rectifier INCHANGE Semiconductor MBR60H100CT FEATURES ·Low Forward Voltage ·Guard -Ring for Stress Protection ·High Surge Capability ·175℃ Operating Junction Temperature ·Pb-Free Package is Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) IFSM TJ Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 125℃ Nonrepetitive Peak Surge Current 8.
3ms single half sine-wave superimposed on rated load conditions Junction Temperature 100 60 350 175 V A A ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Ch...


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