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MSN10B4K

MORESEMI
Part Number MSN10B4K
Manufacturer MORESEMI
Description N-Channel MOSFET
Published Oct 29, 2016
Detailed Description MSN10B4K 100V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =100V,ID =140A RDS(ON) <5.5mΩ @ VGS...
Datasheet PDF File MSN10B4K PDF File

MSN10B4K
MSN10B4K

Overview
MSN10B4K 100V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =100V,ID =140A RDS(ON) <5.
5mΩ @ VGS=10V (Typ:4.
6mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN Configuration Marking and pin assignment TO-220-3L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN10B4K MSN10B4K ...


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