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2N5884

Part Number	2N5884
Manufacturer	NTE
Title	Silicon Power Transistor
Description	The 2N5884 (PNP) and 2N5886 (NPN) are silicon complementary transistors designed for use in general...
Features	D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A D Excellent DC Current Gain: hFE = 20 − 100...
Published	Oct 25, 2016
Datasheet	2N5884 PDF File

Features

D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A D Excellent DC Current Gain: hFE = 20 − 100 @ IC = 10A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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