COMPLEMENTARY SILICON POWER TRANSISTORS - Central Semiconductor
Description
2N5883 2N5884 PNP 2N5885 2N5886 NPN
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epitaxial base transistors designed for power amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current CContinuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC ICM IB PD TJ, Tstg JC
2N5883 2N5885
2N5884 2N5886
60 80
60 80
5.
0
25
50
7.
5
200
-65 to +200
0.
875
UNITS V V V A A A W °C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO ICEO
VCB=Rated VCBO VCE=½Rated VCEO
ICEX
VCE=Rated VCEO, VBE=1.
5V
ICEX
VCE=Rated VCEO, VBE=1.
5V, TC=150°C
IEBO
VEB=5.
0V
BVCEO IC=200mA (2N5...
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