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CJ3406

Part Number	CJ3406
Manufacturer	JCST
Description	MOSFETS
Published	Oct 20, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3406 N-Channel Enhancement Mode...
Datasheet	CJ3406 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3406 N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The CJ3406 use advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
SOT-23 1.
GATE 2.
SOURCE 3.
DRAIN MARKING: R6 Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed (note 1) Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ TSTG Value 30 ±20 3.
6 15 0.
35 357 1...

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