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CJ3400

Part Number	CJ3400
Manufacturer	JCST
Description	N-Channel Enhancement Mode Field Effect Transistor
Published	Oct 20, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode...
Datasheet	CJ3400 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability MARKING: R0 SOT-23 1.
GATE 2.
SOURCE 3.
DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed (note 1) Power Dissipation Thermal Resistance from Junction to Ambient (note 2) Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ TSTG Value 30 ±12 5.
8 30 350 357 150 -55~+150 Unit V V A A mW ℃/W ℃ ℃ A,Dec,2010 ...

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