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NSVMMBD354LT1G

Part Number	NSVMMBD354LT1G
Manufacturer	ON Semiconductor
Description	Dual Hot Carrier Mixer Diodes
Published	Oct 18, 2016
Detailed Description	MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These ...
Datasheet	NSVMMBD354LT1G PDF File

Overview

MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.
Features • Very Low Capacitance − Less Than 1.
0 pF @ Zero V • Low Forward Voltage − 0.
5 V (Typ) @ IF = 10 mA • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Continuous Reverse Voltage VR 7.
0 VCC Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note ...

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NSVMMBD354LT1G Dual Hot Carrier Mixer Diodes - ON Semiconductor

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