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CJ3404

ZPSEMI
Part Number CJ3404
Manufacturer ZPSEMI
Description N-Channel Enhancement Mode Field Effect Transistor
Published Oct 18, 2016
Detailed Description CJ3404 SOT-23 Plastic-Encapsulate MOSFETS CJ3404 N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The CJ...
Datasheet PDF File CJ3404 PDF File

CJ3404
CJ3404

Overview
CJ3404 SOT-23 Plastic-Encapsulate MOSFETS CJ3404 N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The CJ3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
The source leads are separated to allow a Kelvin connection to the source,which may be used to bypass the source inductance.
SOT-23 1.
GATE 2.
SOURCE 3.
DRAIN MARKING: R4 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-source voltage VDS Gate-source voltage VGS Continuous drain current (t ≤10s) ID Pulsed drain current * IDM Thermal resistance from junction to ambient RθJA Junction temperature TJ Storage temperature Tstg * Repetitive rating : Pulse width limited by maximum junction temperature.
Value 30 ±20 5.
8 30 357 150 -55~ 150 Unit V V A A ℃/W ℃ ℃ sales@zpsemi.
com www.
zpsemi.
com 1 of 3 CJ3404 Electrical characteristics (Ta=25℃ unless otherwise not...


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