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CJ3401A

ZPSEMI
Part Number CJ3401A
Manufacturer ZPSEMI
Description P-Channel Enhancement Mode Field Effect Transistor
Published Oct 18, 2016
Detailed Description CJ3401A SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor FEATURE z High d...
Datasheet PDF File CJ3401A PDF File

CJ3401A
CJ3401A

Overview
CJ3401A SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely low RDS(ON).
z Exceptional on-resistance and maximum DC current capability MARKING: R1A SOT-23 1.
GATE 2.
SOURCE 3.
DRAIN G D S Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient (t<5s) Junction Temperature Storage Temperature Symbol VDS VGS ID PD RθJA TJ TSTG Value -30 ±12 -4.
2 400 313 150 -55~+150 Unit V V A mW ℃/W ℃ ℃ sales@zpsemi.
com www.
zpsemi.
com 1 of 3 CJ3401A Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Off characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-source leakage current V(BR)DSS IDSS IGSS VGS = 0V, ID =-250µA VDS =-24V,VGS = 0V VGS =±12V, VDS = 0V On characteristics Drain-s...


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