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CJ3400A

ZPSEMI
Part Number CJ3400A
Manufacturer ZPSEMI
Description N-Channel Enhancement Mode Field Effect Transistor
Published Oct 18, 2016
Detailed Description CJ3400A SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor FEATURE z High d...
Datasheet PDF File CJ3400A PDF File

CJ3400A
CJ3400A

Overview
CJ3400A SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability MARKING: R0A SOT-23 1.
GATE 2.
SOURCE 3.
DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed (note 1) Power Dissipation Thermal Resistance from Junction to Ambient (note 2) Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ TSTG Value 30 ±12 5.
8 30 400 313 150 -55~+150 Unit V V A A mW ℃/W ℃ ℃ sales@zpsemi.
com www.
zpsemi.
com 1 of 3 CJ3400A Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Off Characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-source leakage current V(BR) DSS IDSS IGSS VGS = 0V, ID =250µA VDS =24V,VGS = 0V VGS =±12V, VDS = 0V ...


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