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CJ3400

ZPSEMI
Part Number CJ3400
Manufacturer ZPSEMI
Description N-Channel Enhancement Mode MOSFET
Published Oct 18, 2016
Detailed Description CJ3400 Feature  30V/5.8A, RDS(ON) = 35mΩ(MAX) @VGS = 10V. RDS(ON) =40mΩ(MAX) @VGS = 4.5V. RDS(ON) =55mΩ(MAX) @VGS = 2.5...
Datasheet PDF File CJ3400 PDF File

CJ3400
CJ3400

Overview
CJ3400 Feature  30V/5.
8A, RDS(ON) = 35mΩ(MAX) @VGS = 10V.
RDS(ON) =40mΩ(MAX) @VGS = 4.
5V.
RDS(ON) =55mΩ(MAX) @VGS = 2.
5V.
 Super High dense cell design for extremely low RDS(ON) .
 Reliable and Rugged.
 SC-59 for Surface Mount Package.
N-Channel Enhancement Mode MOSFET SC-59 Applications ● Power Management Portable Equipment and Battery Powered Systems.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous TA=25℃ Unless Otherwise noted Symbol VDS VGS ID Electrical Characteristics TA=25℃ Unless Otherwise noted Parameter Off Characteristics Drain to Source Breakdown Voltage Symbol BVDSS Test Conditions VGS=0V, ID=250μA Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse IGSSF IGSSR VGS=12V, VDS=0V VGS=-12V, VDS=0V On Characteristics Gate Threshold Voltage Static Drain-source On-Resistance VGS(th) RDS(ON) VGS= VDS, ID=250µA VGS =10V...


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