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CJ2101-G

Comchip
Part Number CJ2101-G
Manufacturer Comchip
Description MOSFET
Published Oct 18, 2016
Detailed Description MOSFET CJ2101-G RoHS Device V(BR)DSS -20V RDS(on)MAX 100mΩ @ -4.5V 140mΩ @ -2.5V 210mΩ @ -1.8V ID -1.4A Features - P...
Datasheet PDF File CJ2101-G PDF File

CJ2101-G
CJ2101-G

Overview
MOSFET CJ2101-G RoHS Device V(BR)DSS -20V RDS(on)MAX 100mΩ @ -4.
5V 140mΩ @ -2.
5V 210mΩ @ -1.
8V ID -1.
4A Features - P-Channel MOSFET - Leading trench technology for low RDS(on) extending battery life Mechanical data - Case: SOT-323, molded plastic.
- Terminals: Solderable per MIL-STD-750, method 2026.
- Weight: 0.
008 grams(approx.
).
Comchip SMD Diode Specialist SOT-323 0.
053(1.
35) 0.
045(1.
15) 0.
043(1.
10) 0.
035(0.
90) 0.
087(2.
20) 0.
079(2.
00) D GS 0.
055(1.
40) 0.
047(1.
20) 0.
006(0.
15) 0.
003(0.
08) 0.
096(2.
45) 0.
085(2.
15) 0.
016(0.
40) 0.
008(0.
20) 0.
004(0.
10) 0.
000(0.
00) 0.
017(0.
425)REF.
Dimensions in inches and (millimeter) Circuit diagram - 1.
GATE - 2.
SOURCE - 3.
DRAIN 3 D 1 G Maximum Ratings (at Ta=25 °C unless otherwise noted) Parameter Symbol Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current (tp=10µs) Power dissipation Thermal resistance from junction to ambient Junction temperature range Storage temperature range VDS VGS ID ...


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