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2N6057

Part Number	2N6057
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Oct 14, 2016
Detailed Description	INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6057 DESCRIPTION ·Bu...
Datasheet	2N6057 PDF File

Overview

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6057 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) ·Complement to type 2N6050 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 12 A ICM Collector Current-Peak 20 A IB Base Current 0.
2 A PC Collector Power Dissipation@TC=25℃ 150 ...

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