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2N6040

Part Number	2N6040
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistors
Published	Oct 14, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@...
Datasheet	2N6040 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.
0V(Max)@ IC= -4A ·Complement to Type 2N6043 isc Product Specification 2N6040 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 ICM Collector Current-Peak -16 IB Base Current-DC PC Collector Power Di...

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