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IRG4CC20FB

International Rectifier
Part Number IRG4CC20FB
Manufacturer International Rectifier
Description IGBT Die
Published Oct 10, 2016
Detailed Description IRG4CC20FB IGBT Die in Wafer Form PD- 91831A IRG4CC20FB C G E 600 V Size 2 Fast Speed 6" Wafer Electrical Characteri...
Datasheet PDF File IRG4CC20FB PDF File

IRG4CC20FB
IRG4CC20FB



Overview
IRG4CC20FB IGBT Die in Wafer Form PD- 91831A IRG4CC20FB C G E 600 V Size 2 Fast Speed 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) VCE (on) V(BR)CES Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage 1.
6V Max.
600V Min.
VGE(th) ICES Gate Threshold Voltage Zero Gate Voltage Collector Current 3.
0V Min.
, 6.
0V Max.
250µA Max.
IGES Gate-to-Emitter Leakage Current ± 1.
1µA Max.
Test Conditions IC = 3.
25A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, VGE = 0V VGE = VCE , TJ =25°C, IC =250µA TJ = 25°C, VCE = 600V TJ = 25°C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg.
Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Cr-NiV-Ag (1 kA-2kA-2.
5kA ) 99% Al, 1% Si (4 microns) 0.
107" x 0.
134" 150mm, with std.
< 100 > flat .
015" + / -.
003" 01-5228 100 Microns 0.
25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated Recommended Die Attach Conditions Reference Standard IR packaged part ( for design ) : IRG4BC20F Die Outline nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C www.
irf.
com 1 09/28/07 ...



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