N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics
Description
Advanced Power Electronics Corp.
AP70SL500AJB
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test ▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free
G
S
Description
AP70SL500A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted.
VDS @ Tj,max.
RDS(ON) ID3
750V 0.
5Ω 8.
8A
GD S
TO-251S(JB)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM dv/dt
PD@TC=25℃ PD@TA=25℃ EAS dv/dt
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …400V ) Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy4 Peak Diode Recovery dv/dt5
700 +20 8.
8 5.
6 20 50 78.
1 1.
13 48 15
V V A A A V/ns W W mJ V/ns
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value 1.
6 110
Units ℃/W ℃/W
Data & specifications subject to change without notice
1 201505191
AP70SL500AJB
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS RDS(ON)
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr Rise Time
td(of...
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