N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics
Description
Advanced Power Electronics Corp.
AP70SL500AI
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test ▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free
G
S
Description
AP70SL500A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications.
The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
VDS @ Tj,max.
RDS(ON) ID3,4
750V 0.
5Ω 8.
8A
G DS
TO-220CFM(I)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM dv/dt
PD@TC=25℃ PD@TA=25℃ EAS dv/dt
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …400V ) Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6
700 +20 8.
8 5.
6 20 50 31.
2 1.
92 48 15
V V A A A V/ns W W mJ V/ns
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value 4 65
Units ℃/W ℃/W
Data & specifications subject to change without notice
1 201505191
AP70SL500AI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=250uA Static Drain-Source On-Resistance2 VGS=10V, ID=2A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=2A
IDSS
Drain-Source Leaka...
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