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DN3765

Supertex
Part Number DN3765
Manufacturer Supertex
Description N-Channel Depletion-Mode Vertical DMOS FET
Published Sep 26, 2016
Detailed Description Supertex inc. DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features ►► High input impedance ►► Low input capacit...
Datasheet PDF File DN3765 PDF File

DN3765
DN3765

Overview
Supertex inc.
DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage Applications ►► Normally-on switches ►► Solid state relays ►► Converters ►► Linear amplifiers ►► Constant current sources ►► Telecom General Description This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Ordering Information Part Number Package Option Packing DN3765K4-G TO-252 (D-PAK) 2000/Reel -G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Product Summary BVDSX/BVDGX 650V RDS(ON) (max) 8.
0Ω Pin Configuration IDSS (min) 200mA Absolute Maximum Ratings DRAIN Parameter Value Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature BVDSX BVDGX ±20V -55OC to +150OC SOURCE GATE Maximum junction temperature 150OC TO-252 (D-PAK) Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation under these conditions is not implied.
Continuous operation of the device at the absolute rating level may affect device reliability.
All voltages are referenced to device ground.
Typical Thermal Resistance...


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