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BUW12AF

Inchange Semiconductor
Part Number BUW12AF
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Sep 26, 2016
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·Low Collec...
Datasheet PDF File BUW12AF PDF File

BUW12AF
BUW12AF

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.
) ·Low Collector Saturation Voltage- : VCE(sat)= 1.
5V(Max.
)@IC= 5A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching industrial applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 20 A IB Base Current 4 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 6 A 34 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.
7 ℃/W BUW12AF isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN...


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