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BUV52A

Inchange Semiconductor
Part Number BUV52A
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Sep 26, 2016
Detailed Description isc Silicon NPN Power Transistor BUV52A DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage- : VCE(...
Datasheet PDF File BUV52A PDF File

BUV52A
BUV52A

Overview
isc Silicon NPN Power Transistor BUV52A DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.
9V (Max.
) @IC= 7A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications.
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage (VBE= -1.
5V) VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 400 V 300 V 7 V 20 A 30 A 4 A 6 A 150 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
17 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transi...


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