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BUV48BFI

Inchange Semiconductor
Part Number BUV48BFI
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Sep 26, 2016
Detailed Description isc Silicon NPN Power Transistor BUV48BFI DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 600V (Min) ·...
Datasheet PDF File BUV48BFI PDF File

BUV48BFI
BUV48BFI

Overview
isc Silicon NPN Power Transistor BUV48BFI DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 600V (Min) ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching and industrial applications from single and three-phase mains.
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak tp< 5ms IB Base Current-Continuous IBM Base Current-peak tp< 5ms PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 1200 V 600 V 7 V 15 A 30 A 4 A 20 A 65 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
92 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Sil...


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