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BUV48AFI

Part Number	BUV48AFI
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Sep 26, 2016
Detailed Description	isc Silicon NPN Power Transistor BUV48AFI DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switchin...
Datasheet	BUV48AFI PDF File

Overview

isc Silicon NPN Power Transistor BUV48AFI DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical.
They are particulary suited for line-operated switch mode applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCES VCER Collector-Emitter Voltage (VBE= 0) Collector-Emitter Voltage (RBE= 10Ω) 1000 1000 VCEO Collector-Emitter Voltage 450 UNIT V V V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 4 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 20 A 55 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Juncti...

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