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BUV19

Inchange Semiconductor
Part Number BUV19
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Sep 26, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUV19 DESCRIPTION ·Low Collector Sat...
Datasheet PDF File BUV19 PDF File

BUV19
BUV19

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUV19 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.
6V(Max.
) @IC= 30A ·High Switching Speed APPLICATIONS ·High efficiency converters ·Motor drive control ·Switching regulator Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 160 V 80 V 7V 50 A 70 A 12 A 30 A 250 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.
7 ℃/W isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUV19 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAM...


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