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AP2R803GS-HF

Advanced Power Electronics
Part Number AP2R803GS-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 26, 2016
Detailed Description Advanced Power Electronics Corp. AP2R803GS-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-re...
Datasheet PDF File AP2R803GS-HF PDF File

AP2R803GS-HF
AP2R803GS-HF

Overview
Advanced Power Electronics Corp.
AP2R803GS-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low □on- resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
BVDSS RDS(ON) ID G DS 30V 2.
8mΩ 80A TO-263(S) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current4 Continuous Drain Current4 Pulsed Drain Current1 Total Power Dissipation TSTG TJ Storage Temperature Range Operating Junction Temperature Range Rating 30 +20 80 80 300 104 -55...


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