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SSPL50N30H

Silikron Semiconductor
Part Number SSPL50N30H
Manufacturer Silikron Semiconductor
Description N-Channel enhancement mode power field effect transistors
Published Sep 21, 2016
Detailed Description Main Product Characteristics: VDSS RDS(on) 300V 45mΩ(typ.) ID 50A ① Features and Benefits: TO-247  Advanced MOSFE...
Datasheet PDF File SSPL50N30H PDF File

SSPL50N30H
SSPL50N30H

Overview
...T process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSPL50N30H Marking and Pin Schematic Diagram Assignment Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ T...


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