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NE662M16-A

Part Number	NE662M16-A
Manufacturer	CEL
Description	NPN SILICON RF TRANSISTOR
Published	Sep 17, 2016
Datasheet	NE662M16-A PDF File

Features

• Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over
NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz 
• High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz 
• 6-pin lead-less minimold package

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